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 ADVANCE INFORMATION
HiPerFETTM Power MOSFET
Single MOSFET Die
VDSS
I D25 43A 40A 43A 40A
RDS(on) 0.13W 0.15W 0.13W 0.15W
trr 200ns 200ns 200ns 200ns
IXFN 43N60 IXFN 40N60 IXFK 43N60 IXFK 40N60
600V 600V 600V 600V
TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFK 43N60 40N60 VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL VISOL Md Weight 1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s T J = 25C to 150C T J = 25C to 150C Continuous Transient TC = 25C T C = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/ms, VDD VDSS T J 150C, RG = 2 W TC = 25C 43 172 43 60 5 560 -55 ... +150 150 -55 ... +150 300 N/A N/A 0.9/6 N/A 10 N/A 2500 3000 600 600 20 30 40 160 40 43 172 43 60 5 600 IXFN 43N60 IXFN 40N60 V V V V 40 160 40 A A A mJ V/ns W C C C C V~ V~ G = Gate S = Source
D G D S
600 600 20 30
D (TAB)
miniBLOC, SOT-227 B (IXFN) E153432 S
G
S
D = Drain TAB = Drain
Either Source terminal at miniBLOC can be used as Main or Kelvin Source
Mounting torque Terminal connection torque
1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g
Features * International standard packages * Encapsulating epoxy meets UL 94 V-0, flammability classification * miniBLOC with Aluminium nitride isolation * Low RDS (on) HDMOSTM process * Rugged polysilicon gate cell structure * Unclamped Inductive Switching (UIS) rated * Low package inductance * Fast intrinsic Rectifier Applications * DC-DC converters * Synchronous rectification * Battery chargers * Switched-mode and resonant-mode power supplies * DC choppers * Temperature and lighting controls * Low voltage relays Advantages * Easy to mount * Space savings * High power density
Symbol Test Conditions (TJ = 25C, unless otherwise specified) VDSS VGH(th) IGSS IDSS RDS(on) VGS= 0 V, ID = 3mA VDS = VGS, ID = 8mA VGS= 20 VGE = 0 VDS= 0.8 * VDSS V VGS= 0 V VGS= 10 V, ID = 0.5 * ID25 Pulse test, t 300 ms, duty cycle d 2 % TJ = 25 C TJ = 125 C 43N60 40N60
Characteristic Values Min. Max. 600 2 4 200 400 2 0.13 0.15 V V nA mA mA W W
IXYS reserves the right to change limits, test conditions, and dimensions.
97503 A(7/97)
(c) 2000 IXYS All rights reserved
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IXFK43N60 IXFK40N60
Symbol Test Conditions (TJ = 25C, unless otherwise specified) gfs C iss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK RthJC RthCK TO-264 AA TO-264 AA miniBLOC, SOT-227 B miniBLOC, SOT-227 B 0.05 0.15 0.21 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 R G = 1 (External), VGS = 0 V, VDS = 25 V, f = 1 MHz VDS = 10 V; ID = 0.5 * ID25, pulse test Characteristic Values Min. Typ. Max. TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD 0.22 S pF pF pF ns ns ns ns nC nC nC K/W K/W K/W K/W
Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T
IXFN43N60 IXFN40N60
TO-264 AA Outline
Millimeter Min. Max. 4.82 2.54 2.00 1.12 2.39 2.90 0.53 25.91 19.81 5.46 0.00 0.00 20.32 2.29 3.17 6.07 8.38 3.81 1.78 6.04 1.57 5.13 2.89 2.10 1.42 2.69 3.09 0.83 26.16 19.96 BSC 0.25 0.25 20.83 2.59 3.66 6.27 8.69 4.32 2.29 6.30 1.83
Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072
Source-Drain Diode (TJ = 25C, unless otherwise specified) Symbol Test Conditions IS ISM VSD t rr QRM IRM Notes: 1. 2. VGS = 0 Repetitive; pulse width limited by TJM 43N60 40N60 43N60 40N60
Characteristic Values Min. Typ. Max. 43 40 172 160 1.5 TBD TBD TBD A A A A V ns C A
miniBLOC, SOT-227 B
IF = 100 A, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 50 A, -di/dt = 100 A/s, VR = 100 V
M4 screws (4x) supplied
Dim. Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 38.00 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.23 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 Inches Min. Max. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.496 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004
RGS = 1 M Pulse width limited by TJM.
A B C D E F G H J K L M N O P Q R S T U
(c) 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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